General Purpose Silicon Rectifiers
QW-BG015
Page 1
REV:A
V
oltage: 50 to 1000 V
Current: 3.0
A
RoHS Device
1N5400-G Thru. 1N5408-G
Dimensions
in
inches
and
(millimeter)
DO-27
(DO-201AD)
Features
-Low forward voltage drop.
-
High reliability.
-High current capability
.
-
High surge current capability.
Mechanical data
-Case: M
olded plastic
-Epoxy: UL
94V
-0 rate flame retardant
-Polarity: Color band
denotes cathode end
-Mounting position:
Any
-W
eight: 1.2 grams
1.000(25.40) Min.
1.000(25.40) Min.
0.375(9.53)
0.335(8.51)
0.052(1.32)
DIA.
0.048(1.22)
0.220(5.60)
DIA.
0.197(5.00)
-Lead:
Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
Parameter
Symbol
1N5400
-G
1N5408
-G
Unit
Maximum repetitive
peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
.375”(9.5mm) Lead length @T
A=75°C
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage @3.0A
Maximum DC
reverse current
@TJ=25°C
at rated DC blocking voltage
50
35
50
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
3.0
200
1.0
5.0
V
V
V
A
A
V
μA
Operating temperature range
Storage temperature range
Typical thermal resistance (Note 1)
RθJA
TJ
TSTG
18
-65 to +125
-65 to +150
°C
°C
°C/W
NOTES:
1. Thermal resistance from junction to ambient 0.375” (9.5mm) lead length.
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
@TJ=100°C
100
Maximum Ratings and Electrical Characteristics
(at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N5401
-G
1N5402
-G
1N5404
-G
1N5406
-G
1N5407
-G
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